METHOD FOR FORMING CONTACT PLUG USING BARRIER METAL

摘要

PURPOSE: A formation method of a contact plug is provided to reduce a manufacturing cost and to improve a through-put by forming a titanium nitride as a barrier metal by only a thermal treatment of a titanium at a nitrogen gas or an ammonia gas atmosphere without an extra titanium nitride formation. CONSTITUTION: An insulating layer(220) is formed on a semiconductor substrate(200) having an active region(210). An insulating pattern having a contact hole(230) is formed by partially etching the insulating layer(220) to expose the active region(210). A titanium(240) having a defined thickness is formed on the resultant structure. By annealing the titanium(240) at N2 or NH3 gas atmosphere, a titanium silicide layer(240a) on the active region(210) and a titanium nitride(240b) as a barrier metal on the titanium(240) are simultaneously formed, thereby simplifying a contact plug formation processing.