| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a misalignment and to simplify manufacturing processes by using a single damascene processing. CONSTITUTION: After forming an interlayer dielectric(22) having a contact hole on a semiconductor substrate(21), a lower metal film(23) is formed in the contact hole. After depositing a first barrier metal(24) on the resultant structure, a second interlayer dielectric(25) having a via hole is formed. A second barrier metal and a via(29) are formed in the via hole. A trench is formed by forming a third interlayer dielectric(30) and selectively etching the third interlayer dielectric. Then, a third barrier metal(31) is formed on the entire surface of the resultant structure and a conductive layer is filled into the trench, thereby forming a plug(32).
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