| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to improve a capacitance and to reduce a leakage current by preventing an oxidation of a lower electrode using a TaN film formed at interface between the lower electrode and a dielectric film. CONSTITUTION: After forming an interlayer dielectric(12) having a contact hole on a semiconductor substrate(11), a plug(13) is formed in the contact hole. A first lower electrode(14) is formed on the resultant structure. An ohmic contact layer(15) is formed on the first lower electrode. A second lower electrode(16) is formed on the ohmic contact layer. After sequentially forming a TaN film(17) and a dielectric film(18) on the second lower electrode, an annealing is carried out. An upper electrode(19) is then formed on the dielectric film.
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