| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent flaws due to ultrasonic vibration for the manufacturing method of a semiconductor device including a process for electrically connecting the terminal electrode of a circuit board to the electrode pad of a semiconductor substrate by ultrasonic vibration. SOLUTION: A semiconductor substrate 14 is mounted onto the surface of an insulating circuit board 10 so that the terminal electrode 12 of the insulating circuit board 10 opposes the electrode pad 16 of the semiconductor substrate 14 (figure 1 (b)). Ultrasonic vibration is applied between first and second retention tools 20 and 22 for retaining the insulating circuit board 10 and semiconductor substrate 14, respectively, for obtaining a desired electrical connection (figure 1 (c)). Ultrasonic vibration is generated while interposed materials 26 and 28 with small hardness are being interposed between the first retention tool 20 and insulating circuit board 10, and the second one 22 and semiconductor substrate 14.</p> |
