| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce parasitic resistance between the source and the drain of a FET. SOLUTION: A semiconductor device 200 comprises a double spacer composed of an insulating part 4 and a conductive part 5. The insulating part 4 is in contact with the sides of a substrate surface 1S, a gate insulating film 2, a gate electrode 3, and an insulating film 11. The conductive part 5 is in contact with the sides of the substrate surface 1S and the insulating part 4. Main regions 71 and 81 of a source region 7 and a drain region 8 are in contact with the conductive part 5. Further, extension regions 72 and 82 of the source region 7 and the drain region 8 are in contact with the main regions 71 and 81 and the insulating part 4 of the spacer 6 but are not in contact with the conductive part 5 of the spacer. The source region 7 is electrically connected to wiring 17 via the conductive part 5, and the drain region 8 is electrically connected to wiring 18 via the conductive part 5. |
