| 摘要 |
PROBLEM TO BE SOLVED: To remove resist by inhibiting the generation of metal contamination such as a wafer and particles and the growth of an oxide film. SOLUTION: An ozone gas supply means 40 for supplying an ozone gas 2 into a sealed treatment container 10 for accommodating the wafer W, and a vapor supply means 30 for supplying vapor 1 into the treatment container 10, are provided. An on/off valve 49 that is included at an ozone gas supply pipeline 42, an on/off valve 36 that is included at a vapor supply pipeline 42, an on/off valve 36 that is included at a vapor supply pipeline 34, and a switch 48 and an on/off valve 49 of an ozone generation means 41, are formed so that they can be controlled by a CPU 100, thus supplying the ozone gas 2 into the treatment container 10 for pressurizing the atmosphere surrounding the wafer W, and then supplying vapor 1 into the treatment container 10, at the same time supplying the ozone gas 2, and preventing the removal of the resist of the wafer W, the corrosion of metal, or the like by the vapor 1 and the ozone gas 2. |
