METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of metal interconnections is provided to easily achieve a filling of contact holes having a high aspect ratio and to prevent a spiking of junctions. CONSTITUTION: An interlayer dielectric(23) is formed on a semiconductor substrate(21) having a lower metal wire(22). A contact hole is formed by selectively etching the interlayer dielectric. A barrier metal(24a) is formed on the contact hole. The contact hole is easily filled by selectively growing a metal interconnection(25). Then, an upper metal wire is formed to electrically connect to the lower metal wire(22) via the metal interconnection(25).