| 摘要 |
PROBLEM TO BE SOLVED: To manufacture, in a simple process, a semiconductor device where a bipolar element and a unipolar element are formed on the same substrate without damaging an active region surface of the bipolar element nor forming a biproduct of unwanted shape on the substrate surface. SOLUTION: A semiconductor device is manufactured where a vertical NPNTr. and the like as a bipolar element and a CMOSTr. as a unipolar element are formed on the same semiconductor substrate. Here, there are provided a process where a part of a polycrystal film 21 used as a taking-out electrode of the bipolar element is provided on a gate electrode 11 of the unipolar element, a process where an insulating film 22 is formed on the substrate surface, and a process where opening is done by RIE etching so that a partial surface of the insulating film 22 on the polycrytal film 21 of bipolar element and a surface of the insulating film 22 on an active region 56 of unipolar element are simultaneously exposed.
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