| 发明名称 |
SEMICONDUCTOR ELEMENT AND ITS FABRICATING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a semiconductor substrate 6 is flexed when a protective film is formed in a mesa trench at the time of fabricating a mesa type transistor. SOLUTION: The mesa trench 9 is made on the one major surface 7 side of the semiconductor substrate 6 and the protective film 10a is formed therein. Flexure of the semiconductor substrate 6 is relaxed by forming a metal film 12 having a coefficient of linear expansion higher than that of the semiconductor substrate 6 on the other major surface 8 side thereof.
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| 申请公布号 |
JP2002184855(A) |
申请公布日期 |
2002.06.28 |
| 申请号 |
JP20000381577 |
申请日期 |
2000.12.15 |
| 申请人 |
SANKEN ELECTRIC CO LTD |
发明人 |
HIRANO YOSHITSUGU;TATSUTANI ATSUSHI |
| 分类号 |
H01L29/41;H01L21/28;H01L21/331;H01L21/76;H01L29/43;H01L29/73;H01L29/74;(IPC1-7):H01L21/76 |
主分类号 |
H01L29/41 |
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