发明名称 |
In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning |
摘要 |
After via etch, a low-k dielectric layer (104) is treated with an in-situ O2 plasma. Resist poisoning is caused by a N source that causes an interaction between low-k films (104), such as OSG, and DUV resist (130, 132). The in-situ plasma treatment immediately removes the source of poisoning to reduce or eliminate poisoning at trench patterning.
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申请公布号 |
US2002081855(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20010966605 |
申请日期 |
2001.09.28 |
申请人 |
JIANG PING;KRAFT ROBERT;NEWTON KENNETH J.;ROGERS DATY M. |
发明人 |
JIANG PING;KRAFT ROBERT;NEWTON KENNETH J.;ROGERS DATY M. |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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