Circuit structure for reading out memory cells of EPROM or EEPROM memory components has a memory cell array, a reference cell array and a current comparator.

摘要

A first switch (30) has an output linked to a first input for a current comparator (10), also a first input linked to a memory cell array (1) and a second input linked to a reference cell array (2). A second switch (40) has an output linked to a second input for the current comparator and a first input linked to the reference cell array. A digital-analog converter linked to a second input for the second switch adjusts preset current values on input of matching digital values. An Independent claim is also included for a memory component like an EPROM or EEPROM memory storage with a circuit structure.