发明名称 Process and device for in-situ decontamination of a EUV lithography device
摘要 EUV lithography devices do indeed have a vacuum or an inert gas atmosphere in their interior, yet the appearance of hydrocarbons and/or other carbon compounds within the device cannot be fully prevented. These carbon compounds lead to the contamination of the optical elements and a resulting loss in reflectivity. In order to counteract this, it has been suggested that while operating the EUV lithography device, the degree of contamination should be constantly monitored, e.g. using quartz crystal microwaves. Depending on the degree of contamination, oxygen is supplied to the interior of the lithography device. The oxygen, in combination with exposure radiation breaks down the contamination while the lithography device is running. The EUV lithography device is thereby equipped with at least one measuring device (3) and a connected control unit (4), which is connected to the oxygen supply (5a).
申请公布号 US2002083409(A1) 申请公布日期 2002.06.27
申请号 US20010010135 申请日期 2001.12.06
申请人 HAMM UWE W. 发明人 HAMM UWE W.
分类号 G03F7/20;H01L21/027;(IPC1-7):G06F17/50 主分类号 G03F7/20
代理机构 代理人
主权项
地址