发明名称 Seed layer deposition
摘要 Disclosed are methods for depositing a conductive layer on a substrate having a barrier layer and/or a dielectric layer. Such methods are particularly suitable for depositing an electroplated copper layer on a substrate having small apertures, and preferably very small apertures.
申请公布号 US2002079232(A1) 申请公布日期 2002.06.27
申请号 US20010057624 申请日期 2001.10.25
申请人 SHIPLEY COMPANY, L.L.C. 发明人 SHELNUT JAMES G.
分类号 C25D7/12;H05K3/18;H05K3/42;(IPC1-7):C25D3/00;C25D3/30;C25D3/38;H01L21/445 主分类号 C25D7/12
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