Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen

摘要

A process for the chemical-mechanical polishing of isolation layers based on the shallow trench isolation (STI) technology, using a basic polishing slurry which contains from about 5 to about 12.5 % by weight of a colloidal silica abrasive, characterised in that the polishing slurry is applied to the wafer surface at a temperature of about 35 DEG C to about 80 DEG C, increases the polishing selectivity with regard to the rate at which silica is removed compared to the rate at which silicon nitride is removed.