发明名称 Semiconductor memory
摘要 An external address is input to an address register AR, and an internal address {circle over (1)} as an output from this address register AR is supplied to a burst length determination circuit BLD. The burst length is determined based on the level of this external address at a timing specified by a burst length setting signal /BL. A binary counter/logic BCL1 outputs burst internal addresses {circle over (2)} Ax'' to A0'' and internal addresses {circle over (1)} A16'' to A(x+1)' to a memory cell array MCA. This allows data having a desired burst length to be input or output.
申请公布号 US2002083295(A1) 申请公布日期 2002.06.27
申请号 US20010010852 申请日期 2001.12.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAUCHI YOSHIKAZU
分类号 G11C11/407;G11C7/10;(IPC1-7):G11C7/00;G06F12/00 主分类号 G11C11/407
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