| 摘要 |
<p>The invention concerns a birectional switch formed in a N-type semiconductor substrate (1), comprising a first main vertical thyristor (Th1) whereof the rear face layer (2) is of P-type conductivity, a second main vertical thyristor (Th2) whereof the rear face layer (6) is N-type, a P-type peripheral region (7) extending from the front face to the rear face, a first metallization (M1) covering the rear face, a second metallization (M2) on the front face side connecting the front face layers of the first and second thyristor, and a N-type gate region (27) in part of the upper surface of the peripheral region.</p> |
