发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD OF ERASURE |
摘要 |
The invention provides a semiconductor memory having a good rewriting characteristic independent of over-programming. A nonvolatile semiconductor device includes a memory cell array and a reference cell that provides a reference level, which is a criterion for determining whether the data in the memory cell array are over-programmed.
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申请公布号 |
WO0250843(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
WO2000JP09109 |
申请日期 |
2000.12.21 |
申请人 |
FUJITSU LIMITED;TAKAHASHI, SATOSHI |
发明人 |
TAKAHASHI, SATOSHI |
分类号 |
G11C16/34;(IPC1-7):G11C16/00 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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