| 摘要 |
There is provided a circuit for sensing a memory cell. The circuit includes a main cell, a reference cell, a first loading unit for providing a preset voltage to a sensing node of the main cell, a second loading unit for supplying a prescribed voltage to a sensing node of the reference cell, a first switching unit for adjusting the potential of the main cell sensing node, a second switching unit for controlling the potential of the reference cell sensing node, a first voltage controlling unit for adjusting the potential of a bit line of the main cell, a second voltage controlling unit for adjusting the potential of a bit line of the reference cell, and a sense amplifier for sensing a state of the main cell by comparing the potential of the main cell sensing node and that of the reference cell sensing node.
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