Process for producing an MOS field effect transistor with a recombination zone

摘要

A process having a robust process sequence for producing an MOS field effect transistor having a horizontal buried gate formed of polysilicon and a recombination zone provided at the surface of the transistor includes the steps of producing the horizontal polysilicon gate first and then introducing the recombination zone. The process allows producing a transistor without encountering problems caused by the insufficient high-temperature compatibility of metals.