Thin film semiconductor integrated circuit and method for forming the same

摘要

There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of islands and a gate insulation film is formed to cover the impurity regions. Further, a thermal annealing or an optical annealing is performed on the impurity regions and regions in which channels are to be formed adjacent thereto and the gate insulation film to improve the characteristics of those regions themselves and to eliminate discontinuity at the boundaries between those regions. After the above-described steps, gate electrodes are formed. An anodic oxide is provided at least at the portion of a gate electrode provided in the matrix region where it intersects with a line in the layer above it to prevent the gate electrode from shorting with the line.