发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device by which bondability is improved is disclosed. A multi-chip substrate (7) on which an insulating layer such as of solder resist is formed and which has a first side (7c) and a second side (7d) is prepared. Then, semiconductor chips (1) are arranged on the multi-chip substrate (7). When connection terminals on the package substrate of the multi-chip substrate (7) and pads of the semiconductor chips (1) are heated and wire-bonded, a gas (11) is ejected from a part near the first side (7c) of the multi-chip substrate (7) toward the upper part of the multi-chip substrate (7), and the gas (11) over the upper part of the multi-chip substrate (7) and an organic gas generated from the insulating layer are sucked into a part near the second side (7d) while the wire-bonding is performed, so that the bondability is enhanced.
申请公布号 WO0250891(A1) 申请公布日期 2002.06.27
申请号 WO2000JP09093 申请日期 2000.12.21
申请人 HITACHI, LTD.;HITACHI YONEZAWA ELECTRONICS CO., LTD.;TAKAHASHI, TOMISHI 发明人 TAKAHASHI, TOMISHI
分类号 H01L21/56;H01L21/607;H01L23/31;H01L23/498 主分类号 H01L21/56
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