发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device by which bondability is improved is disclosed. A multi-chip substrate (7) on which an insulating layer such as of solder resist is formed and which has a first side (7c) and a second side (7d) is prepared. Then, semiconductor chips (1) are arranged on the multi-chip substrate (7). When connection terminals on the package substrate of the multi-chip substrate (7) and pads of the semiconductor chips (1) are heated and wire-bonded, a gas (11) is ejected from a part near the first side (7c) of the multi-chip substrate (7) toward the upper part of the multi-chip substrate (7), and the gas (11) over the upper part of the multi-chip substrate (7) and an organic gas generated from the insulating layer are sucked into a part near the second side (7d) while the wire-bonding is performed, so that the bondability is enhanced. |
申请公布号 |
WO0250891(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
WO2000JP09093 |
申请日期 |
2000.12.21 |
申请人 |
HITACHI, LTD.;HITACHI YONEZAWA ELECTRONICS CO., LTD.;TAKAHASHI, TOMISHI |
发明人 |
TAKAHASHI, TOMISHI |
分类号 |
H01L21/56;H01L21/607;H01L23/31;H01L23/498 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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