| 摘要 |
The present invention relates to a BGA semiconductor device using an insulating film. The BGA semiconductor device using the insulating film has purge holes (a) made between through-holes 2 in a base film 1 as a substrate, so that stagnant air is purged from voids (s) formed between the insulating film 4 set on the upper face of a wiring pattern 3 and the wiring pattern 3 via the purge holes (a) before electronic elements formed with chip bonding are packaged with a sealing resin 5.
|
