发明名称 QUICK RESPONSE PHOTOCURRENT MULTIPLYING DEVICE
摘要 <p>By irradiating a photocurrent multiplying layer (1) with light (18) while applying a voltage to the photocurrent multiplying layer (1) by electrodes (2, 3), photocurrent multiplication is caused at the interface between the photocurrent multiplying layer (1) and the electrode (2). The photocurrent multiplying layer (1) is the evaporated film which is formed by adding a different material to a photoconductive organic semiconductor (doping) . This photoconductive organic semiconductor may be a perylene pigment (Me-PCT). The photocurrent multiplying film has thickness of 500 nm. The Me-PCT is sublimated and purified, before used, two times. The metal electrode (2) is made of a semitransparent gold evaporated film (having a thickness of 20 nm), and the metal electrode (3) is made of an ITO (Indium-Tin Oxide) and is a transparent evaporated electrode formed on a glass substrate.The light response of the multiplied photocurrent is quickened.</p>
申请公布号 WO2002050920(P1) 申请公布日期 2002.06.27
申请号 JP2001010458 申请日期 2001.11.29
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