A COMPLEMENTARY COUPLE-CARRY FIELD TRANSISTOR AND THE SYSTEM FORMED ON A SUBSTRATE

摘要

A complementary couple-carry field effect transistor, wherein which different regions are disposed with N or P impurity and narrow-section channels are formed at Z=LZ. Sources and drains connected to contact terminals are disposed in two-dimension structure. It is possible to avoid restraining by the lithography according to the present invention. The availability length of channel of the transistor may be reduced as short as 5nm, voltage potent of the transistor may be reduced to 0.65V used by conventional semiconductor technology process, and the number of the channels of each of transistors may by from three to twelve according to the present invention. The complementary inversion device and the system of the field effect transistors can be formed on an array substrate, whose output current may have 10A according to the present invention. Also the logic circuits can be formed on a substrate which are of complexity, high-speed operation and low-power dissipation, and the micro-frequency circuits and the system can be formed on the substrate which are of high-frequency and low-power dissipation according to the present invention.