| 摘要 |
PURPOSE: A fine photoresist pattern formation method is provided to improve a profile of photoresist patterns by irradiating an electron beam to the photoresist patterns. CONSTITUTION: After coating a photoresist layer on a semiconductor substrate having an etch object layer, a photoresist pattern is formed by exposing and developing the photoresist layer. Electron beams are irradiated to the photoresist pattern, so that the profile of the photoresist pattern is improved. The etch object layer is then etched by using the photoresist pattern as a mask.
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