| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to prevent an oxidation of a lower electrode and a barrier metal and to simplify manufacturing processes by using Ru-Y composite as the lower electrode. CONSTITUTION: An interlayer dielectric(2) having a contact hole is formed on a semiconductor substrate(1). A polysilicon plug(3) and barrier films having a titanium silicide(4) and a titanium nitride(5) are sequentially filled into the contact hole. A lower electrode(8) made of Ru-Y composite is formed on the resultant structure by sputtering Ru metal and by doping Y into the Ru metal. The Y has a high oxidation free energy compared to the Ru. Then, a dielectric film(9) and an upper electrode(10) are sequentially formed on the lower electrode.
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