| 摘要 |
PURPOSE: A metal contact formation method of semiconductor devices is provided to improve a reliability and to reduce manufacturing costs by preventing a corrosion of word lines using a SiON layer. CONSTITUTION: A plurality of word lines(32) are formed on a semiconductor substrate(31). A first interlayer dielectric(33) and an etch stopper(34) are sequentially formed on the resultant structure. After forming a second interlayer dielectric(35), a SiON layer(36) is formed on the second interlayer dielectric(35) by using PECVD(Plasma Enhanced CVD). A contact hole is formed by sequentially etching the SiON layer, the second interlayer dielectric, the etch stopper and the first interlayer dielectric. Then, a trench is formed by selectively etching the SiON layer(36) and the second interlayer dielectric(35). After forming a metal barrier(41), a metal contact(42) is formed on the trench and the contact hole.
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