发明名称 Three-dimensional memory array and method for storing data bits and ECC bits therein
摘要 The preferred embodiments described herein provide a three-dimensional memory array and method for storing data bits and ECC bits therein. In one preferred embodiment, a three-dimensional memory array of the type that includes multiple vertically-stacked layers of memory cells is provided. The three-dimensional memory array comprises a plurality of memory cells arranged in a plurality of physically-independent sub-arrays, and data bits and error checking and correcting (ECC) bits of a word are stored in respective ones of the physically-independent sub-arrays. By spatially diffusing data bits and ECC bits from a word, the likelihood of multiple-bit errors within the word is reduced. This is advantageous since most ECC circuitry is capable of correcting only single-bit errors within a given word. Other preferred embodiments are disclosed.
申请公布号 US2002083390(A1) 申请公布日期 2002.06.27
申请号 US20000747574 申请日期 2000.12.22
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 LEE THOMAS H.;CLEEVES JAMES M.;JOHNSON MARK G.
分类号 G06F11/10;H01L27/10;(IPC1-7):G11C29/00 主分类号 G06F11/10
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