| 发明名称 |
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain |
| 摘要 |
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
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| 申请公布号 |
US2009152601(A1) |
申请公布日期 |
2009.06.18 |
| 申请号 |
US20090319887 |
申请日期 |
2009.01.12 |
| 申请人 |
HATTENDORF MICHAEL L;HWANG JACK;MURTHY ANAND;WESTMEYER ANDREW N |
发明人 |
HATTENDORF MICHAEL L.;HWANG JACK;MURTHY ANAND;WESTMEYER ANDREW N. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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