发明名称 Resist composition and patterning process
摘要 A polymer comprises recurring units of formula (1) and recurring units having acid labile groups which units increase alkali solubility as a result of the acid labile groups being decomposed under the action of acid, and has a Mw of 1,000-500,000. R1 and R2 each are hydrogen, hydroxyl, hydroxyalkyl, alkyl, alkoxy or halogen, and n is 0, 1, 2, 3 or 4. The polymer is useful as a base resin to form a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, and high etching resistance and is best suited as a micropatterning material for use in VLSI manufacture.
申请公布号 US2002081521(A1) 申请公布日期 2002.06.27
申请号 US20010984726 申请日期 2001.10.31
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TAKEDA TAKANOBU;HATAKEYAMA JUN;WATANABE OSAMU;KUBOTA HIROSHI
分类号 C08F232/08;C08K5/13;C08K5/36;G03F7/004;G03F7/039;(IPC1-7):G03F7/004 主分类号 C08F232/08
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