APPARATUS FOR ETCHING NOBLE METALS USING ION IMPLANTATION AND METHOD OF USE
摘要
Apparatus for etching a patterned layer of a noble metal such as platinum. The apparatus implements a process whereby exposed areas of the noble metal are first implanted with ions and are subsequently etched. Both the ion implantation step and the etching step occur sequentially in the same chamber in the presence of a plasma discharge. The apparatus uses either a dual output power supply or two distinct power supplies to sequentially supply a high power output required for the ion implantation step and a low power output required for the etching step. Multiple cycles of implantation followed by etching may be applied to achieve deep etching of thick layers. A programmed computer controls the process steps. A method of using the apparatus is also provided.
申请公布号
WO0223586(A3)
申请公布日期
2002.06.27
申请号
WO2001US28440
申请日期
2001.09.13
申请人
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
ATHAVALE, SATISH;LEE, BRIAN;LEE, HEON;LEE, KILHO;LIMB, YOUNG;PARK, YOUNG JIN;SIM, JAI-HOON