| 摘要 |
<p>The invention provides a surface-emitting semiconductor laser with low device resistance, a method of manufacture thereof, and a surface-emitting semiconductor laser array. The laser device includes a p-type semiconductor substrate, on which are formed a lower reflector layer structure and an upper reflector layer structure. An etch stop layer, a current constriction layer, and an active layer are formed one over another between the reflector layer structures. The portion above the etch stop layer has the shape of a mesa.</p> |
