WIDEBAND DUAL AMPLIFIER CIRCUITS

摘要

Dual amplifying circuits having a magnetic tunnel junction device (MTS) and a field effect transistor (FET) configured in a complementing set are disclosed herein. In one embodiment, the field effect transistor (FET) is operable to control a current level of a current operating signal flowing through the magnetic tunnel junction device (MTS). In another embodiment, the magnetic tunnel junction device (MTS) is operable to control a voltage level of a voltage signal being applied to a gate terminal of the field effect transistor (FET). The gain-bandwidth product of both embodiments is greater than the individual gain-bandwidth products of the individual devices through the elimination of noise contributing resistive type circuit elements.