| 摘要 |
A method of fabricating an integrated circuit insulator stack, such as an emitter window dielectric, is disclosed. A single vacuum sequence (50) is performed in a low pressure chemical vapor deposition (LPCVD) process chamber. In one disclosed example, a layer of silicon dioxide (20) is first deposited by the chemical vapor deposition (44) of bistertiarybutylaminosilane (BTBAS) in the presence of oxygen; before removing the wafer from the process chamber, a layer of silicon nitride (22) is then deposited by the chemical vapor deposition (48) of BTBAS in ammonia. The CVD processes (44, 48) are performed at low pressures, such as 500 mTorr or less, and at low temperatures, such as below 650° C.
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