Semiconductor integrated circuit device and manufacturing method thereof

摘要

In the semiconductor integrated circuit device, two epitaxial layers and are formed on a substrate, and they are electrically isolated by a P+ type isolating region into three island regions. A diode element is formed in the first island region, and an N+ type well region is formed in an overlapping relationship with an N+ type cathode lead region. Since this reduces the resistance of an N-type region at a PN junction to reduce a forward voltage VBEF, a forward current (If) capacity can be significantly improved.