发明名称 |
SiGe MODFET with a metal-oxide film and method for fabricating the same |
摘要 |
There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel stricture devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.
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申请公布号 |
US2002079507(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20010927939 |
申请日期 |
2001.08.13 |
申请人 |
SHIM KYU HWAN;KIM HONG SEUNG;LEE SEUNG YUN;KANG JIN YEOUNG |
发明人 |
SHIM KYU HWAN;KIM HONG SEUNG;LEE SEUNG YUN;KANG JIN YEOUNG |
分类号 |
H01L21/336;H01L21/335;H01L29/778;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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