发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 Circuit elements constituting a circuit, a wiring, and a first electrode electrically connected to the circuit are provided on a major surface of a semiconductor substrate. An organic insulating film is formed on the circuit except the opening made in the surface of the first electrode. First and second external connection electrodes are provided on the organic insulating film. A conductive layer for connection between the first and second external connection electrodes and the first electrode is deposited on the organic insulating film.
申请公布号 WO0250898(A1) 申请公布日期 2002.06.27
申请号 WO2001JP11039 申请日期 2001.12.17
申请人 HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD.;SHINOZAKI, MASAO;NISHIMOTO, KENJI;AKIOKA, TAKASHI;KOHARA, YUTAKA;SUGITA, SANAE;MIYATA, SHUSAKU;NAKAZATO, SHINJI 发明人 SHINOZAKI, MASAO;NISHIMOTO, KENJI;AKIOKA, TAKASHI;KOHARA, YUTAKA;SUGITA, SANAE;MIYATA, SHUSAKU;NAKAZATO, SHINJI
分类号 H01L21/60;H01L23/485;H01L23/528 主分类号 H01L21/60
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