| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to improve electrical properties by forming a dielectric film having an orientation of a-b axis using two-step annealing processes. CONSTITUTION: A transistor having a source(5b), a drain(5a) and a gate is formed on a silicon substrate(1). After forming an interlayer dielectric(9) having a contact hole on the resultant structure, a plug including an ohmic layer(11) and a metal barrier(12) is filled into the contact hole. A lower electrode(13) is formed on the resultant structure. A dielectric film(14), such as BST having an orientation of a-b axis is formed on the lower electrode by two-step RTA(Rapid Thermal Annealing) processes. At this time, the temperature of the first RTA processing is 475-525°C, and the temperature of the second RTA processing is 525-750°C. Then, an upper electrode(15) is formed on the dielectric film.
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