Device and method for improved electrostatic discharge protection

摘要

A method includes introducing into an integrated circuit a device comprising a transistor including a drain of a first conductivity type and a first concentration in a well of a first conductivity type and a second concentration, a first region of the first conductivity type and first concentration in the well, and a second region of a second conductivity type in the well between the first region and the drain. The method also includes coupling the device to a pad. In the presence of a pre-determined current at the pad, the device biases a junction between the second region and the well toward current flow in the absence of a latch-up event.