发明名称 |
Power semiconductor device, power arm and inverter circuit |
摘要 |
It is an object of the present invention to provide an inverter circuit including a power arm ensuring a high breakdown voltage and having low probability of malfunction. In a power arm element consisting of a switching element and a diode connected in inverse-parallel connection thereto, n free wheeling diodes (n>=2) connected in series are connected in inverse-parallel connection to a switching element (1b). A breakdown voltage between an anode and a cathode of each free wheeling diode is defined to be 1/n of a breakdown voltage of the switching element (1b). That is, the breakdown voltage of each free wheeling diode is reduced to 1/n to reduce a thickness of a n- drift region. A transient voltage characteristic during flow of a free wheeling current can be thereby kept low. The drop in the breakdown voltage is compensated with the n free wheeling diodes connected in series, to thereby ensure breakdown voltage of a degree approximately the same as that of the switching element.
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申请公布号 |
US2002079519(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20010880919 |
申请日期 |
2001.06.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAJUMDAR GOURAB;HATAE SHINJI |
分类号 |
H01L27/148;H02H7/122;H02M7/00;H02M7/5387;H03K17/08;(IPC1-7):H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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