| 发明名称 |
Semicoductor device and method of manufacturing of the same |
| 摘要 |
A defect-free film is formed on a surface of a protrusive electrode. An immersion Au film is formed on the surface of the protrusive electrode, after a gap which an immersion Au plating liquid can enter evenly is formed between a protrusive electrode made of Ni or a Ni alloy on an electrode pad made of Al or mainly made of Al and a protective coat by etching. |
| 申请公布号 |
US2002081843(A1) |
申请公布日期 |
2002.06.27 |
| 申请号 |
US20010971268 |
申请日期 |
2001.10.05 |
| 申请人 |
YAMAGUCHI SHINJI;ASAZU TAKURO;ONO ATSUSHI |
发明人 |
YAMAGUCHI SHINJI;ASAZU TAKURO;ONO ATSUSHI |
| 分类号 |
C23C18/16;C23F1/00;H01L21/288;H01L21/60;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
C23C18/16 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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