发明名称 METHOD OF FORMING TITANIUM OXIDE FILM AND TITANIUM ELECTROLYTIC CAPACITOR
摘要 <p>A method of forming an oxide film on a metal titanium substrate, comprising firing in vacuum or inactive gas atmosphere metal titanium substrate having an oxide film at least 50 nm in thickness on the surface thereof to reduce the oxide film thickness to less 50 nm, and then subjecting the film to oxidization to thereby re-form an oxide film on the metal titanium substrate surface; and a titanium electrolytic capacitor using as an anode a metal titanium substrate having the re-formed oxide film by using this method. Thereby, a small, large-capacity, small-leaking-current titanium electrolytic capacitor is provided through a method of forming a large-dielectric-constant, stable oxide film on a titanium surface.</p>
申请公布号 WO2002049965(P1) 申请公布日期 2002.06.27
申请号 JP2001010981 申请日期 2001.12.14
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