发明名称 CLEANING AND ETCHING METHODS AND THEIR APPARATUSES
摘要 <p>A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a natural oxide film SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, thereby enabling etching. The cleaning and etching rates are extremely high.</p>
申请公布号 WO2002050884(P1) 申请公布日期 2002.06.27
申请号 JP2001011059 申请日期 2001.12.17
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