| 摘要 |
<p>The invention relates to semiconductor devices and can be used for microelectronics. Said devices can be embodied in the form of a voltage-controlled adjustable capacitor, varicap, transistor and transmission line. The inventive semiconductor device comprises an insulating layer (5) with a conducting area (6) formed on a part of the surface thereof. A first layer (1) made of acceptor-type semiconductor or donor-type semiconductor is formed on the other part of the surface and provided with an ohmic connection (11). A second layer (2) made of semiconductor or metal is embodied on the surface of the first layer and forms with the first layer a semiconductor junction provided with another ohmic connection (12). A part of an insulating layer (14) contacting the first layer is made of high-ohmic semiconductor. Selection of a doping profile depends on a total depletion of the first layer or the part thereof performed by main charge carriers until the semiconductor junction is broken down.</p> |
