| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to simplify manufacturing processes by simultaneously forming a metal silicide at a contact portion of a peripheral region and on surface of a plug of a cell region. CONSTITUTION: A plurality of gate electrode patterns are formed on a semiconductor substrate having a cell region and a peripheral region. Impurity diffusion regions are formed in the semiconductor substrate by using the gate electrode patterns as an implantation mask. A conductive plug is formed on the impurity diffusion region of the cell region. Metal silicide films(35) are formed on the conductive plug of the cell region and at the impurity diffusion region of the peripheral region.
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