| 摘要 |
PURPOSE: A reduction method of particle contamination in a manufacturing process of semiconductor wafer is provided to stably perform processes and to improve a yield by evenly forming a SOG(Spin On Glass) through etching a flat zone of a wafer. CONSTITUTION: A flat zone(33) of a semiconductor wafer(31) is firstly etched. A material layer made of an amorphous polysilicon layer is secondly formed on the entire surface of the resultant structure. A fluid insulating layer made of a SOG is thirdly formed on the material layer. At this time, the fluid insulating layer is nearly even due to the previous etched semiconductor wafer(31), thereby restraining particle contamination when etching the fluid insulating layer. Lastly, the fluid insulating layer and the material layer are sequentially removed by etching processes.
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