| 摘要 |
PURPOSE: A fine pattern formation method of semiconductor devices is provided to prevent a degradation of fine patterns and to compensate a CD(Critical Dimension) reducing by using a tag pattern. CONSTITUTION: A plurality of main patterns(21) spaced apart from each other are formed. A single tag pattern(22) is formed at outside of the main patterns(21). In order to minimize pattern deformation, the tag pattern(22) is formed at outside of the main patterns(21). That is, the difference of light intensity due to an OPE(Optical Proximity Effect) between a high density and a low density pattern regions is reduced by using the tag pattern(22). The tag pattern(22) has a dog-bone shape.
|
