| 摘要 |
In an MRAM, a current with high current density flows in a line in write operation. When write operation is to be performed with respect to a memory cell existing at the intersection of a write word line and a bit line, a current flows in the write word line from a WWL driver to a voltage down converter. Thereafter, a current flows in the write word line in a direction opposite to the direction of the current flowing in the write operation, i.e., from the voltage down converter to the WWL driver. The same applies to a bit line. For example, after write operation, a current flows in the bit line in a direction opposite to the direction of a current flowing in the write operation.
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