发明名称 GAS SCRUBBER FOR TREATING THE GAS GENERATED DURING THE SEMICONDUCTOR MANUFACTURING PROCESS
摘要 An improved gas scrubber is provided. The gas scrubber includes a combustion chamber and a wetting chamber. Between the combustion chamber and the wetting chamber is a mechanism or means that substantially prevent formation of particulate matter, or powder, forming between the two chambers. The combustion chamber serves to eliminate explosive and flammable elements contained in an incoming gas. Those elements are eliminated by burning the incoming gas. The wetting chamber may be placed below the combustion chamber to eliminate a water soluble element of the gas which is not burned in the combustion chamber by dissolving those elements in water. The mechanism or means placed between the two chambers helps eliminate the powder produced due to the temperature difference between the combustion chamber and the wetting chamber at the interface between the two chambers.
申请公布号 US2002081240(A1) 申请公布日期 2002.06.27
申请号 US19990287602 申请日期 1999.04.07
申请人 KIM DONG-SOO 发明人 KIM DONG-SOO
分类号 B01D47/02;F23G7/06;F23J15/02;(IPC1-7):F01N3/00;F23J11/00;B32B27/02;B01D50/00;B01D53/34;F01N3/10;B01D47/00;B01D53/14 主分类号 B01D47/02
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