| 摘要 |
<p>The present invention refers to the field of dynamic random access memories (DRAMs), and, in particular, to a method for making an electrical connection between a trench storage capacitor and an access transistor. The method of the present invention comprises the steps of preparing said semiconductor substrate, providing at least one isolating layer on said substrate, providing a deep trench (2) in said semiconductor substrate, forming a trench capacitor in a lower part of said deep trench, said trench capacitor having a trench center electrode (15) surrounded by an isolating material, filling said trench with a conductive material, the lower part of said conductive material being isolated from said semiconductor substrate by an isolating collar (4), defining an active area of said DRAM cell, said active area being adjacent to one side of said deep trench, forming a transistor in said active area with an electrode extending to make electrical contact with said conductive material in said deep trench (2), wherein the uppermost part of said conductive material in said trench, said uppermost part being at the same level as the isolating layer, is recessed to form a buried strap (5) after lithographically defining said active area. <IMAGE></p> |
